Long-Wavelength Infrared Semiconductor Lasers
-15%
portes grátis
Long-Wavelength Infrared Semiconductor Lasers
Choi, Hong K.
John Wiley & Sons Inc
04/2004
420
Dura
Inglês
9780471392002
15 a 20 dias
758
Descrição não disponível.
Preface.
Acknowledgments.
Contributors.
1. Coherent Sources in the Long-Wavelength Infrared Spectrum(Hong K. Choi).
1.1 Introduction.
1.2 Synopsis of Long-Wavelength Coherent Sources.
1.3 Scope of Book.
2. 2-?m Wavelength Lasers Employing InP-basedStrained-Layer Quantum Wells (Manabu Mitsuhara and MamoruOishi).
2.1 Introduction.
2.2 Material Properties of InGaAsP.
2.3 Design Consideration of MQW Active Region.
2.4 Growth and Characterization of Strained-InGaAs QuantumWells.
2.5 Lasing Characteristics of 2-?m wavelength InGaAs-MQWLasers.
2.6 Conclusions and Future Prospects.
3. Antimonide Mid-IR Lasers (L.J. Olafsen, et al.).
3.1 Introduction.
3.2 Antimonide III-V Material System.
3.3 Antimonide Lasers Emitting in the 2?m < lambda <3?m Range.
3.4 Antimonide Lasers Emitting in the lambda >= 3?mRange.
3.5 Challenges and Issues.
3.6 Conclusions.
4. Lead-Chalcogenide-based Mid-Infrared Diode Lasers (Uwe PeterSchieal, et al.).
4.1 Introduction.
4.2 Homostructure Lasers.
4.3 Double-Heterostructure Lasers.
4.4 Quantum-Well Lasers.
4.5 DFB and DBR Lasers.
4.6 IV-VI Epitaxy on BaF2 and Silicon.
4.7 Conclusion.
5. InP and GaAs-Based Quantum Cascade Lasers (JeromeFaist and Carco Sirtori).
5.1 Introduction.
5.2 Quantum Cascade Laser Fundamentals.
5.3 Fundamentals of the Three-Quantum-Well Active-RegionDevice.
5.4 Waveguide and Technology.
5.5 High-Power, Room-Temperature Operation of Three-Quantum-WellActive Region Designs.
5.6 GaAs-Based QC Lasers.
5.7 Role of the Conduction-Band Discontinuity.
5.8 Spectral Characteristics of QC Lasers.
5.9 Distributed Feedback Quantum Cascade Lasers.
5.10 Microsctructured QC Lasers.
5.11 Outlook on Active Region Designs and Conclusions.
6. Widely Tunable Far-Infrared Hot-Hole Semiconductor Lasers(Erik Bruendermann).
6.1 Introduction.
6.2 Hot-Hole Laser Model.
6.3 Laser Material Fabrication.
6.4 Technology.
6.5 Laser Emission.
6.6 Future Trends.
6.7 Summary.
7. Continous THz generation with Optical Heterodyning (J. C.Pearson, et al.).
7.1 Introduction.
7.2 Requirements for Photomixing Systems.
7.3 Design Trade-offs for Photomixers.
7.4 Antenna Design.
7.5 Applications.
7.6 Summary.
Index.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
laser; absorption; longwavelength; first; technology; treatment; molecular; comprehensive; strong; between; detection; spectral range; lasers; ideal components; semiconductor; ultrasensitive; applications; variety; wide; fine; molecules; study
Preface.
Acknowledgments.
Contributors.
1. Coherent Sources in the Long-Wavelength Infrared Spectrum(Hong K. Choi).
1.1 Introduction.
1.2 Synopsis of Long-Wavelength Coherent Sources.
1.3 Scope of Book.
2. 2-?m Wavelength Lasers Employing InP-basedStrained-Layer Quantum Wells (Manabu Mitsuhara and MamoruOishi).
2.1 Introduction.
2.2 Material Properties of InGaAsP.
2.3 Design Consideration of MQW Active Region.
2.4 Growth and Characterization of Strained-InGaAs QuantumWells.
2.5 Lasing Characteristics of 2-?m wavelength InGaAs-MQWLasers.
2.6 Conclusions and Future Prospects.
3. Antimonide Mid-IR Lasers (L.J. Olafsen, et al.).
3.1 Introduction.
3.2 Antimonide III-V Material System.
3.3 Antimonide Lasers Emitting in the 2?m < lambda <3?m Range.
3.4 Antimonide Lasers Emitting in the lambda >= 3?mRange.
3.5 Challenges and Issues.
3.6 Conclusions.
4. Lead-Chalcogenide-based Mid-Infrared Diode Lasers (Uwe PeterSchieal, et al.).
4.1 Introduction.
4.2 Homostructure Lasers.
4.3 Double-Heterostructure Lasers.
4.4 Quantum-Well Lasers.
4.5 DFB and DBR Lasers.
4.6 IV-VI Epitaxy on BaF2 and Silicon.
4.7 Conclusion.
5. InP and GaAs-Based Quantum Cascade Lasers (JeromeFaist and Carco Sirtori).
5.1 Introduction.
5.2 Quantum Cascade Laser Fundamentals.
5.3 Fundamentals of the Three-Quantum-Well Active-RegionDevice.
5.4 Waveguide and Technology.
5.5 High-Power, Room-Temperature Operation of Three-Quantum-WellActive Region Designs.
5.6 GaAs-Based QC Lasers.
5.7 Role of the Conduction-Band Discontinuity.
5.8 Spectral Characteristics of QC Lasers.
5.9 Distributed Feedback Quantum Cascade Lasers.
5.10 Microsctructured QC Lasers.
5.11 Outlook on Active Region Designs and Conclusions.
6. Widely Tunable Far-Infrared Hot-Hole Semiconductor Lasers(Erik Bruendermann).
6.1 Introduction.
6.2 Hot-Hole Laser Model.
6.3 Laser Material Fabrication.
6.4 Technology.
6.5 Laser Emission.
6.6 Future Trends.
6.7 Summary.
7. Continous THz generation with Optical Heterodyning (J. C.Pearson, et al.).
7.1 Introduction.
7.2 Requirements for Photomixing Systems.
7.3 Design Trade-offs for Photomixers.
7.4 Antenna Design.
7.5 Applications.
7.6 Summary.
Index.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
